www.kersemi.com 1 7/25/01 IRFR15N20D irfu15n20d smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 200v 0.165 w 17a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current ? 68 p d @t c = 25c power dissipation 140 p d @t a = 25c power dissipation* 3.0 w linear derating factor 0.96 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt ? 8.3 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings d-pak IRFR15N20D i-pak irfu15n20d pd - 94245 l high frequency dc-dc converters benefits applications l low gate-to-drain charge to reduce switching losses l fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) l fully characterized avalanche voltage and current parameter typ. max. units r q jc junction-to-case CCC 1.04 r q ja junction-to-ambient (pcb mount)* CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance
irfr/u15n20d 2 www.kersemi.com parameter min. typ. max. units conditions g fs forward transconductance 4.0 CCC CCC s v ds = 50v, i d = 10a q g total gate charge CCC 27 41 i d = 10a q gs gate-to-source charge CCC 6.9 10 nc v ds = 160v q gd gate-to-drain ("miller") charge CCC 14 21 v gs = 10v, ? t d(on) turn-on delay time CCC 9.7 CCC v dd = 100v t r rise time CCC 32 CCC i d = 10a t d(off) turn-off delay time CCC 17 CCC r g = 6.8 w t f fall time CCC 8.9 CCC v gs = 10v ? c iss input capacitance CCC 910 CCC v gs = 0v c oss output capacitance CCC 170 CCC v ds = 25v c rss reverse transfer capacitance CCC 31 CCC pf ? = 1.0mhz c oss output capacitance CCC 1380 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 67 CCC v gs = 0v, v ds = 160v, ? = 1.0mhz c oss eff. effective output capacitance CCC 150 CCC v gs = 0v, v ds = 0v to 160v ? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ? CCC 260 mj i ar avalanche current ? CCC 10 a e ar repetitive avalanche energy ? CCC 14 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.5 v t j = 25c, i s = 10a, v gs = 0v ? t rr reverse recovery time CCC 130 200 ns t j = 25c, i f = 10a q rr reverse recoverycharge CCC 610 920 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 17 68 a static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.26 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.165 w v gs = 10v, i d = 10a ? v gs(th) gate threshold voltage 3.0 CCC 5.5 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 200v, v gs = 0v CCC CCC 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leakage current
irfr/u15n20d www.kersemi.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 17a
irfr/u15n20d 4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 10a v = 40v ds v = 100v ds v = 160v ds 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j
irfr/u15n20d www.kersemi.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d
irfr/u15n20d 6 www.kersemi.com 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.2a 7.2a 10a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v v gs
irfr/u15n20d www.kersemi.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfr/u15n20d 8 www.kersemi.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006). irfu120 916a lot code assembly example: with assembly this is an irfr120 year 9 = 1999 dat e code line a we e k 16 in the assembly line "a" as s embled on ww 16, 1999 lot code 1234 part number int ernational logo rect ifier 34 12
irfr/u15n20d www.kersemi.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) week 19 line a ye ar 9 = 1999 dat e code part number in the assembly line "a" as s e mble d on ww 19, 1999 lot code 5678 rect if ier logo international assembly l ot code 56 78 example: with assembly t his is an irf r120 irf u120 919a
irfr/u15n20d 10 www.kersemi.com ? repetitive rating; pulse width limited by max. junction temperature. ? i sd 10a, di/dt 170a/s, v dd v (br)dss , t j 175c notes: ? starting t j = 25c, l = 4.9mh r g = 25 w , i as = 10a. ? pulse width 400s; duty cycle 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
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